产品概述
描述
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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所有功能
- AEC-Q101 qualified
- High speed switching performance
- Very fast and robust intrinsic body diode
- Low capacitance
EDA符号、封装和3D模型
STMicroelectronics - SCTH100N120G2-AG
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样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCTH100N120G2-AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
SCTH100N120G2-AG 批量生产
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