该碳化硅功率MOSFET器件采用意法半导体先进且创新的第二代碳化硅 (SiC) MOSFET技术开发而成。该器件单位面积导通电阻极低且具有良好的开关性能。开关损耗的变化几乎与结温无关。
STMicroelectronics - SCTH100N120G2-AG
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