产品概述
描述
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
-
所有功能
- AEC-Q101 rev. C qualified
- Very fast and robust intrinsic body diode
- Low capacitances
- Very high operating junction temperature capability (TJ = 200 °C)
EDA符号、封装和3D模型
意法半导体 - SCT20N170AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型