产品概要
描述
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
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性能一览
- Low spread of dynamic parameters
- Minimum lot-to-lot spread for reliable operation
- High voltage capability
- Very high switching speed
EDA Symbols, Footprints and 3D Models
STMicroelectronics - BULD742C
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| BULD742CT4 | Active 产品已量产 | DPAK | Industrial | Ecopack2 | - | 2024-06-10T00:00:00.000+02:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| BULD742CT4 | | | distributors 无法联系到经销商，请联系我们的销售办事处 | |||||||||||
BULD742CT4 Active