产品概述
描述
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
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所有功能
- INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
- VERY HIGH SWITCHING SPEED
- STMicroelectronics PREFERRED SALES TYPE
- HIGH VOLTAGE CAPABILITY
- NPN TRANSISTOR
- MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
- LOW SPREAD OF DYNAMIC PARAMETERS
EDA符号、封装和3D模型
意法半导体 - BUL128D-B
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符号
封装
3D模型