产品概述
描述
The device is a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary PNP is the 2STR2230.
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所有功能
- Very low collector-emitter saturation voltage
- Fast switching speed
- High current gain characteristic
- Miniature SOT-23 plastic package for surface mounting circuits
EDA符号、封装和3D模型
意法半导体 - 2STR1230
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