产品概述
描述
The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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所有功能
- Very low collector-emitter saturation voltage
- High current gain characteristic
- Fast switching speed
EDA符号、封装和3D模型
意法半导体 - 2STL1525
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