产品概述
描述
The L6391 is a high voltage device manufactured with the BCD™ “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.
The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing the microcontroller/DSP.
An integrated comparator is available for protections against overcurrent, overtemperature, etc.
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所有功能
- High voltage rail up to 600 V
- dV/dt immunity ± 50 V/nsec in full temperature range
- Driver current capability:
- 290 mA source
- 430 mA sink
- Switching times 75/35 nsec rise/fall with 1 nF load
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Integrated bootstrap diode
- Comparator for fault protections
- Smart shutdown function
- Adjustable deadtime
- Interlocking function
- Compact and simplified layout
- Bill of material reduction
- Effective fault protection
- Flexible, easy and fast design
电路原理图
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特别推荐
EDA符号、封装和3D模型
STMicroelectronics - L6391
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
质量与可靠性
| 产品型号 | Marketing Status | 包 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| L6391D | 批量生产 | SO-14 | 工业 | Ecopack2 | |
| L6391DTR | 批量生产 | SO-14 | 工业 | Ecopack2 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| L6391D | | | distributors 无法联系到经销商，请联系我们的销售办事处 | |||||||||||
| L6391DTR | | | distributors 无法联系到经销商，请联系我们的销售办事处 | |||||||||||
L6391D 批量生产
L6391DTR 批量生产