STDRIVE®GaN栅极驱动器是一种半桥栅极驱动器，用于增强模式GaN FET或N沟道功率MOSFET。
高侧部分可承受高达600 V的电压，适用于总线电压高达500 V的设计。该器件具有高电流能力、短传播延迟和低至5 V的工作电源电压，用于驱动高速GaN和Si FET。
该器件在上下驱动部分均具有UVLO保护，可防止电源开关在低效率或危险条件下运行，并且互锁功能可避免出现交叉传导的情况。逻辑输入兼容CMOS/TTL（可低至3.3 V），易于与微控制器和DSP连接。
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