产品概述
描述
The M48Z128/Y ZEROPOWER®RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated battery-backed memory solution.
The M48Z128/Y is a non-volatile pin and function equivalent to any JEDEC standard 128 K x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed. The 32-pin, 600 mil DIP module houses the M48Z128/Y silicon with a long-life lithium button cell in a single package.
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所有功能
- Integrated, ultra low power SRAM, power-fail control circuit, and battery
- Conventional SRAM operation; unlimited WRITE cycles
- 10 years of data retention in the absence of power
- Battery internally isolated until power is first applied
- Automatic power-fail chip deselect and WRITE protection
- WRITE protect voltages: (VPFD= power-fail deselect voltage)
- M48Z128: VCC= 4.75 to 5.5 V; 4.5 V ≤ VPFD≤ 4.75 V
- M48Z128Y: VCC= 4.5 to 5.5 V; 4.2 V ≤ VPFD≤ 4.5 V
- Pin and function compatible with JEDEC standard 128 K x 8 SRAMs
- RoHS compliant
- Lead-free second level interconnect
电路原理图
EDA符号、封装和3D模型
意法半导体 - M48Z128
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