产品概要
描述
The EVSTGAP2GSN is a half bridge evaluation board designed to evaluate the STGAP2GSN isolated single gate driver.
The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and high power inverter applications such as power conversion and motor driver inverters in industrial applications.
The device allows to independently optimize turn-on and turn-off by using dedicated gate resistors.
The device integrates protection functions including thermal shutdown and UVLO with optimized level for enhancement-mode GaN transistors, which enables easy design high efficiency and reliable systems. Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction.
The device allows implementing negative gate driving, and the on board isolated DC-DC converters allows working with optimized driving voltage for e-mode GaN transistors.
The EVSTGAP2GSN board allows evaluating all the STGAP2GSN features driving the SGT120R65AL 75 mΩ, 650 V e-Mode GaN transistors.
The board components are easy to access and modify to make driver performance evaluation easier under different application conditions and fine adjustment of final application components.
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性能一览
- Board
- Half bridge configuration, high voltage rail up to 650 V
- SGT120R65AL: 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor
- Negative gate driving
- On board isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 1.5 kV maximum isolation
- VDD logic supplied by on-board 3.3 V or VAUX = 5 V
- Easy jumper selection of driving voltage configuration: +6/0 V; +6/-3 V
- Device
- 1700 V functional isolation
- Driver current capability: 2 A / 3 A source/sink @ 25 °C, VH = 6 V
- Separate sink and source for easy gate driving configuration
- Input-output propagation delay: 45 ns
- UVLO function optimized for GaN
- Gate driving voltage up to 15 V
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Temperature shut down protection
- Board
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
Board Manufacturing Specifications (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| 7Z | 1.0 | 20 Nov 2023 | 20 Nov 2023 |
BOM (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| 1.0 | 20 Nov 2023 | 20 Nov 2023 |
Schematic Pack (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| 1.0 | 20 Nov 2023 | 20 Nov 2023 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | WEEE Compliant | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| EVSTGAP2GSN | Active 产品已量产 | CARD | Industrial | Ecopack1 | - | - | - | |
EVSTGAP2GSN
Package:
CARDMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Supplier | Core Product | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EVSTGAP2GSN | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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EVSTGAP2GSN Active