产品概述
描述
This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switching-losses with a minimized QRR(6.5 nC) that makes it perfect for use in circuits working in hard-switching mode. In particular the VF/QRRtrade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio.
The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints.
Featuring ST's Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits.
-
所有功能
- High voltage rectifier
- Tandem diodes in series
- Very low switching losses
- Insulated device with internal ceramic
- Equal thermal conditions for both 300 V diodes
- Static and dynamic equilibrium of internal diodes are warranted by design
- Insulated package:
- Capacitance: 7 pF
- Insulated voltage: 2500 V rms
EDA符号、封装和3D模型
意法半导体 - STTH12T06
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 | Actions | 細節 | 下載 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 12.0 | 06 Feb 2026 | 06 Feb 2026 |
SIMPLIS models (1)
| 资源标题 | 版本 | 更新时间 | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 23 May 2025 | 23 May 2025 |