STTH12S06
Active
Design Win
600 V、12 A Turbo 2超高速升压二极管

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产品概要

描述

ST's STTH12S06 is a state of the art Ultrafast recovery diode. By the use of 600 V Pt doping Planar technology, this diode will outperform the power factor correction circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH12S06, reduces significantly the switching power losses of the MOSFET, and thus increases the efficiency of the application. This allows designers to reduce the size of their heatsinks.

This device is also intended for applications in power supplies and power conversions systems, and other power switching applications.

  • 性能一览

    • Insulated voltage: 1500 VRMS
    • Ultrafast recovery
    • Reduces losses in diode and switching transistor
    • Low reverse recovery current
    • Higher frequency operation
    • Low thermal resistance

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STTH12S06

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Quality and Reliability

Part Number Marketing Status Package Grade 符合RoHS级别 Longevity Commitment Longevity Starting Date Material Declaration**
STTH12S06FP
Active
TO-220FPAC Industrial Ecopack2 - -

STTH12S06FP

Package:

TO-220FPAC

Material Declaration**:

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Marketing Status

Active

Package

TO-220FPAC

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

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STTH12S06FP

经销商的可用性 STTH12S06FP

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STTH12S06FP Active

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Part Number:

STTH12S06FP

Junction Temperature (°C) (max):

175

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商