产品概述
描述
ST's STTH12S06 is a state of the art Ultrafast recovery diode. By the use of 600 V Pt doping Planar technology, this diode will outperform the power factor correction circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH12S06, reduces significantly the switching power losses of the MOSFET, and thus increases the efficiency of the application. This allows designers to reduce the size of their heatsinks.
This device is also intended for applications in power supplies and power conversions systems, and other power switching applications.
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所有功能
- Insulated voltage: 1500 VRMS
- Ultrafast recovery
- Reduces losses in diode and switching transistor
- Low reverse recovery current
- Higher frequency operation
- Low thermal resistance
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EDA符号、封装和3D模型
意法半导体 - STTH12S06
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | |||
|---|---|---|---|---|---|
| ZIP | 11.0 | 10 May 2023 | 10 May 2023 |
SIMPLIS models (1)
| 资源标题 | 版本 | 更新时间 | |||
|---|---|---|---|---|---|
| ZIP | 1.0 | 23 May 2025 | 23 May 2025 |
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样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | Junction Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STTH12S06FP | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STTH12S06FP 批量生产