产品概述
描述
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC8H065-Y SiC diode will boost performance in hard switching conditions.
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所有功能
- AEC-Q101 qualified
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Recommended to PFC applications
- PPAP capable
- VRRM guaranteed from -40 to 175 °C
- D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
- ECOPACK®2 compliant component
EDA符号、封装和3D模型
STMicroelectronics - STPSC8H065-Y
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 06 Dec 2019 | 06 Dec 2019 |
质量与可靠性
| 产品型号 | Marketing Status | 包 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STPSC8H065BY-TR | 批量生产 | DPAK | 汽车应用 | Ecopack2 | |
| STPSC8H065G2Y-TR | 批量生产 | D2PAK HV | 汽车应用 | Ecopack2 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | Junction Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STPSC8H065G2Y-TR | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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| STPSC8H065BY-TR | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STPSC8H065G2Y-TR 批量生产
STPSC8H065BY-TR 批量生产