产品概述
描述
The SiC diode, available in SMB-Flat, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Based on technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.
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所有功能
- AEC-Q101 qualified and PPAP capable
- None or negligible reverse recovery charge in application current range
- Switching behaviour independent of temperature
- High forward surge capability
- Operating Tj from -55 °C to +175 °C
- ECOPACK2 compliant component
EDA符号、封装和3D模型
意法半导体 - STPSC4G065UFY
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
质量与可靠性
| 产品型号 | Marketing Status | 包 | 等级规格 | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | 材料声明** |
|---|---|---|---|---|---|---|---|
| STPSC4G065UFY | 批量生产 | SMBFlat | 汽车应用 | Ecopack3 | 10 | 2025-03-21T00:00:00.000+01:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | Junction Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STPSC4G065UFY | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STPSC4G065UFY 批量生产