STPSC30G065G2Y
批量生产
Design Win
650 V, 30 A high surge silicon carbide power Schottky diode

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产品概述

描述

The SiC diode STPSC30G065G2Y, available in D2PAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.

Based on technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boost the performance in hard switching conditions. Using the latest design improvement of the “G” series of ST SiC diodes, as well as implemented tests in production, this diode is becoming the reference point in the combination of efficiency and application robustness to the application design.

  • 所有功能

    • AEC-Q101 qualified and PPAP capable
    • No reverse recovery charge in application current range
    • Switching behaviour independent of temperature
    • High forward surge capability
    • Operating Tj from -55 °C to +175 °C
    • ECOPACK2 compliant component

EDA符号、封装和3D模型

意法半导体 - STPSC30G065G2Y

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3D模型

质量与可靠性

料号 Marketing Status 等级规格 符合RoHS级别 Longevity Commitment Longevity Starting Date 材料声明**
STPSC30G065G2Y
批量生产
D2PAK HV 汽车应用 Ecopack2 - -

STPSC30G065G2Y

Package:

D2PAK HV

Material Declaration**:

Marketing Status

批量生产

Package

D2PAK HV

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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STPSC30G065G2Y

经销商的可用性 STPSC30G065G2Y

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STPSC30G065G2Y 批量生产

Budgetary Price (US$)*/Qty:
-
包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

料号:

STPSC30G065G2Y

Junction Temperature (°C) (max):

175

代理商名称

代理商库存报告日期:

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商