STPSC2H12-Y
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Education Design Win
汽车1200V、2A高浪涌碳化硅二极管

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产品概要

描述

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in boot strap, snubber circuits, or clamping functions of SiC MOS-FETs, the STPSC2H12-Y diode will help designers getting the best possible performance of their controlled switches in all conditions. This rectifier will enhance the performance of the targeted application.

Its improved creepage distance ensures the compatibility with industrial and automotive creepage standards.

  • 性能一览

    • AEC-Q101 qualified
    • PPAP capable
    • No or negligible reverse recovery
    • High forward surge capability
    • Operating Tj from -40 °C to 175 °C
    • Creepage distance of 3 mm as per IEC 60664-1
    • ECOPACK2 compliant component

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC2H12-Y

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Quality and Reliability

Part Number Marketing Status Package Grade 符合RoHS级别 Longevity Commitment Longevity Starting Date Material Declaration**
STPSC2H12B2Y-TR
Active
DPAK HV 2L Automotive Ecopack2 - -

STPSC2H12B2Y-TR

Package:

DPAK HV 2L

Material Declaration**:

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Marketing Status

Active

Package

DPAK HV 2L

Grade

Automotive

RoHS Compliance Grade

Ecopack2

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STPSC2H12B2Y-TR

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Part Number:

STPSC2H12B2Y-TR

Junction Temperature (°C) (max):

175

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商