STPSC15H12G2-TR

批量生产
Design Win Education

1200V, 15A, silicon carbide power Schottky Diode

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产品概述

描述

This 15 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.

The STPSC15H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

  • 所有功能

    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Robust high voltage periphery
    • Operating Tj from -40 °C to 175 °C
    • Low VF
    • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
    • ECOPACK2 compliant

EDA符号、封装和3D模型

STMicroelectronics - STPSC15H12G2-TR

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符号

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封装

3D model

3D模型

质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
STPSC15H12G2-TR
批量生产
H2PAK-2 工业 Ecopack2

STPSC15H12G2-TR

Package:

H2PAK-2

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

H2PAK-2

Grade

Industrial

RoHS Compliance Grade

Ecopack2

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样片和购买

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包装类型
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ECCN (EU)
Junction Temperature (°C) (max)
STPSC15H12G2-TR
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经销商的可用性 STPSC15H12G2-TR

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STPSC15H12G2-TR 批量生产

Budgetary Price (US$)*/Qty:
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包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

产品型号:

STPSC15H12G2-TR

Junction Temperature (°C) (max):

175

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商