STPSC10H065G2
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650 V, 10 A High Surge Silicon Carbide Power Schottky Diode

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产品概要

描述

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.

The STPSC10H065G2 will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

  • 性能一览

    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • High forward surge capability
    • Operating Tj from -40 °C to 175 °C
    • Power efficient product
    • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
    • ECOPACK2 compliant component

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC10H065G2

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Quality and Reliability

Part Number Marketing Status Package Grade 符合RoHS级别 Longevity Commitment Longevity Starting Date Material Declaration**
STPSC10H065G2-TR
Active
H2PAK-2 Industrial Ecopack2 - -

STPSC10H065G2-TR

Package:

H2PAK-2

Material Declaration**:

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Marketing Status

Active

Package

H2PAK-2

Grade

Industrial

RoHS Compliance Grade

Ecopack2

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STPSC10H065G2-TR

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STPSC10H065G2-TR Active

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Part Number:

STPSC10H065G2-TR

Junction Temperature (°C) (max):

175

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商