STPSC10H065DLF
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650V 10A功率肖特基碳化硅二极管

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产品概要

描述

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Qualified in low profile package, the STPSC10H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.

  • 性能一览

    • Less than 1 mm height package
    • High creepage package
    • No or negligible reverse recovery
    • Temperature independent switching behavior
    • High forward surge capability
    • Very low drop forward voltage
    • Power efficient product
    • ECOPACK2 compliant component

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STMicroelectronics - STPSC10H065DLF

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Quality and Reliability

Part Number Marketing Status Package Grade 符合RoHS级别 Longevity Commitment Longevity Starting Date Material Declaration**
STPSC10H065DLF
Active
POWER FLAT MLPD 8X8 4L MIXPLANT Industrial Ecopack2 7 2020-01-01T00:00:00.000+01:00

STPSC10H065DLF

Package:

POWER FLAT MLPD 8X8 4L MIXPLANT

Material Declaration**:

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Marketing Status

Active

Package

POWER FLAT MLPD 8X8 4L MIXPLANT

Grade

Industrial

RoHS Compliance Grade

Ecopack2

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STPSC10H065DLF

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Part Number:

STPSC10H065DLF

Junction Temperature (°C) (max):

175

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商