产品概要
描述
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the SiC diode will boost performance in hard switching conditions.
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性能一览
- AEC-Q101 qualified
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Recommended to PFC applications
- PPAP capable
- ECOPACK compliant component
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STPSC10H065BY-TR
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
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SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
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| ZIP | 1.0 | 06 Dec 2019 | 06 Dec 2019 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STPSC10H065BY-TR | Active 产品已量产 | DPAK | Automotive | Ecopack2 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | Junction Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STPSC10H065BY-TR | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STPSC10H065BY-TR Active