产品概述
描述
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the SiC diode will boost performance in hard switching conditions.
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所有功能
- AEC-Q101 qualified
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Recommended to PFC applications
- PPAP capable
- ECOPACK compliant component
EDA符号、封装和3D模型
STMicroelectronics - STPSC10H065BY-TR
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 06 Dec 2019 | 06 Dec 2019 |
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | Junction Temperature (°C) (max) | ||
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| 最小值 | 最大值 | ||||||||||||||
| STPSC10H065BY-TR | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STPSC10H065BY-TR 批量生产