产品概述
描述
The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
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所有功能
- ESD protection
- Diagnostic feedback through input pin
- Compatible with standard Power MOSFET
- Linear current limitation
- Short circuit protection
- Thermal shutdown
- Low current drawn from input pin
- Direct access to the gate of the Power MOSFET (analog driving)
- Integrated clamp
电路原理图
EDA符号、封装和3D模型
意法半导体 - VNN1NV04P-E
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Please select one model supplier :
符号
封装
3D模型
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样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VNN1NV04PTR-E | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
VNN1NV04PTR-E 批量生产