Product overview
描述
The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
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All features
- ESD protection
- Logic level input threshold
- High noise immunity
- Linear current limitation
- Short circuit protection
- Thermal shutdown
- Low current drawn from input pin
- Schmitt trigger on input
- Integrated clamp
电路原理图
EDA Symbols, Footprints and 3D Models
STMicroelectronics - VND10N06
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Symbols
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3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| VND10N06TR-E | Active 产品已量产 | DPAK | Automotive | Ecopack1 (*) | 10 | 2026-01-01T00:00:00.000+01:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VND10N06TR-E | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
VND10N06TR-E Active