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VND10N06-1

已停产
Design Win

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

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产品概述

描述

The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

  • 所有功能

    • ESD protection
    • Logic level input threshold
    • High noise immunity
    • Linear current limitation
    • Short circuit protection
    • Thermal shutdown
    • Low current drawn from input pin
    • Schmitt trigger on input
    • Integrated clamp

EDA符号、封装和3D模型

意法半导体 - VND10N06-1

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