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VNB35NV04

已停产
Design Win

OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET

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产品概述

描述

The VNB35NV04 and VNV35NV04 are monolithic devices designed in STMicroelectronics®VIPower®M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications.

Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

  • 所有功能

    • Linear current limitation
    • Thermal shut down
    • Short circuit protection
    • Integrated clamp
    • Low current drawn from input pin
    • Diagnostic feedback through input pin
    • ESD protection
    • Direct access to the gate of the Power MOSFET (analog driving)
    • Compatible with standard Power MOSFET

EDA符号、封装和3D模型

意法半导体 - VNB35NV04

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