VNB35N07-E
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Education Design Win
OMNIFET II全自动保护功率MOSFET

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Product overview

描述

The VNP35N07-E, VNB35N07-E and VNV35NV07-E are monolithic devices made using STMicroelectronics VIPower®technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications.

Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

  • All features

    • Automotive qualified
    • Linear current limitation
    • Thermal shutdown
    • Short circuit protection
    • Integrated clamp
    • Low current drawn from input pin
    • Diagnostic feedback through input pin
    • ESD protection
    • Direct access to the gate of the Power MOSFET (analog driving)
    • Compatible with standard Power MOSFET
    • Standard TO-220 package
    • Compliant with 2002/95/EC European directive

EDA Symbols, Footprints and 3D Models

STMicroelectronics - VNB35N07-E

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3D models

Quality and Reliability

Part Number Marketing Status Package Grade 符合RoHS级别 Longevity Commitment Longevity Starting Date Material Declaration**
VNB35N07TR-E
Active
D2PAK Automotive Ecopack1 (*) 10 2026-01-01T00:00:00.000+01:00

VNB35N07TR-E

Package:

D2PAK

Material Declaration**:

PDF XML

Marketing Status

Active

Package

D2PAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1 (*)

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商