产品概述
描述
The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
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所有功能
- ESD PROTECTION
- DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
- COMPATIBLE WITH STANDARD POWER MOSFET
- LINEAR CURRENT LIMITATION
- SHORT CIRCUIT PROTECTION
- THERMAL SHUT DOWN
- LOW CURRENT DRAWN FROM INPUT PIN
- DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
- INTEGRATED CLAMP
电路原理图
EDA符号、封装和3D模型
意法半导体 - VNB10N07
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
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样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VNB10N07TR-E | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
VNB10N07TR-E 批量生产