Loading spinner

RF2L36040CF2

已停产
Design Win

40 W, 28 V, 2.7 to 3.6 GHz RF power LDMOS transistor

下载数据手册

产品概述

描述

The RF2L36040CF2 is a 40 W 28 V common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for cellular and S-band radar applications at frequencies from 2.7 to 3.6 GHz. It can be used in class A/AB and C for all typical modulation formats.

  • 所有功能

    • High efficiency and linear gain operations
    • Integrated ESD protection – HBM class 2
    • Internally matched for ease of use
    • Large positive and negative gate/source voltage range for improved class C operation
    • Excellent thermal stability, low HCI drift
    • In compliance with the European Directive 2002/95/EC

EDA符号、封装和3D模型

意法半导体 - RF2L36040CF2

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

符号

Footprints

封装

3D model

3D模型