Product overview
描述
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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All features
- Maximum junction temperature : TJ = 175 °C
- Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
- Very fast and soft recovery co-packaged diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGWA20H65DFB2
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
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SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
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| ZIP | 1.0 | 29 Apr 2020 | 29 Apr 2020 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| STGWA20H65DFB2 | Active 产品已量产 | Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long leads package | TO-247 long leads | Industrial | Ecopack2 | - | - | |
STGWA20H65DFB2
Package:
Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long leads packageMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
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| 最小值 | 最大值 | ||||||||||||||
| STGWA20H65DFB2 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STGWA20H65DFB2 Active