Product overview
描述
该碳化硅功率MOSFET器件采用意法半导体先进的第三代SiC MOSFET创新技术开发而成。该器件在整个温度范围内都具有极低的RDS(on)，兼具低电容和非常高的开关操作频率，不仅能提高应用的频率、能效，还能减小系统尺寸和重量。
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All features
- 稳定的超快速本体二极管
- 在整个温度范围内都具有极低的RDS(on)
- 高速开关性能
- 供电检测引脚可提高效率
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SCT018H65G3-7
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 24 Aug 2023 | 24 Aug 2023 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| SCT018H65G3-7 | Active 产品已量产 | H2PAK-7 | Industrial | Ecopack1 | - | - | |
SCT018H65G3-7
Package:
H2PAK-7Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCT018H65G3-7 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
SCT018H65G3-7 Active
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无法联系到经销商，请联系我们的销售办事处
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