产品概述
描述
GaN-based motion control is the focus of the GaNSPIN platform. Unlike many general-purpose solutions or those tailored for power conversion, the GaNSPIN series is specifically engineered to meet the peculiar demands of motion control systems.
The GANSPIN612 is an advanced power system-in-package integrating two enhancement mode GaN transistors in half-bridge configuration driven by a state-of-the-art high-voltage, high-frequency gate driver.
The integrated power GaNs have RDS(ON) of 270 mΩ and 650 V drain source breakdown voltage, while the high-side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The GANSPIN612, being designed for motion control, optimizes the output dV/dt to 10 V/ns typ. for both hard-on and hard-off. This is required in motor control for EMI, motor winding, and ball bearing reliability.
Robustness and reliability are also distinctive factors of the GaNSPIN series. Embedding advanced protections, GaNSPIN devices ensure the best possible system robustness. SmartShutdown overcurrent protection delivers the fastest response possible thanks to embedded logic and dedicated fast comparators.
The GANSPIN series also features linear regulators on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The UVLO is fine-tuned for motion control for optimal performances.
The GANSPIN612 is available in a compact 9x9x1 mm QFN package and operates in the industrial temperature range, -40 °C to 125 °C.
The GaNSPIN612 is pin-to-pin with GaNSPIN611 (RDS(ON) of 138 mΩ) to maximize scalability in a platform approach.
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所有功能
- Power system-in-package family integrating high-voltage GaN transistors in half-bridge configuration with high-voltage gate driver:
- RDS(ON) = 270 mΩ
- IDS(MAX) = 5.5 A
- Reverse conduction capability and zero reverse recovery loss
- 10 V/ns typ. output dV/dt in both hard-on and hard-off, tailored for motor control
- Externally adjustable turn-on dV/dt
- Linear regulators to regulate high-side and low-side driver supply voltage
- Internal bootstrap diode
- Comparator for overcurrent detection with Smart Shutdown function
- UVLO protection on VCC, VHS and VLS
- Interlocking function, shutdown, standby and fault pins
- 55 ns gate driver leading to overall 150 ns typ. output propagation delay
- 3.3 V to 20 V compatible inputs with hysteresis and pull-down
- Power system-in-package family integrating high-voltage GaN transistors in half-bridge configuration with high-voltage gate driver:
更多产品线信息
EDA符号、封装和3D模型
意法半导体 - GANSPIN612
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符号
封装
3D模型
质量与可靠性
| 料号 | Marketing Status | 包 | 等级规格 | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | 材料声明** |
|---|---|---|---|---|---|---|---|
| GANSPIN612 | 批量生产 | TFQFPN 9X9X1.05 35L PITCH 0.6MM | 工业 | Ecopack2 | 10 | 2025-01-01T00:00:00.000+01:00 | |
| GANSPIN612TR | 批量生产 | TFQFPN 9X9X1.05 35L PITCH 0.6MM | 工业 | Ecopack2 | 10 | 2025-01-01T00:00:00.000+01:00 | |
GANSPIN612
Package:
TFQFPN 9X9X1.05 35L PITCH 0.6MMMaterial Declaration**:
GANSPIN612TR
Package:
TFQFPN 9X9X1.05 35L PITCH 0.6MMMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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样片和购买
| 料号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| GANSPIN612 | | | distributors 无法联系到经销商，请联系我们的销售办事处 | |||||||||||
| GANSPIN612TR | | | distributors 无法联系到经销商，请联系我们的销售办事处 | |||||||||||
GANSPIN612 批量生产
GANSPIN612TR 批量生产