STPSC10G065
Active
Design Win
650 V, 10A High surge Silicon Carbide power Schottky diode

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产品概述

描述

The SiC diode, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature

Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions. Using the latest design improvement of the “G” series of ST SiC diodes, as well as implemented tests in production, this diode is becoming the reference point in the combination of efficiency and application.

  • All features

    • None or negligible reverse recovery charge in application current range
    • Switching behaviour independent of temperature
    • High forward surge capability
    • Operating Tj from -55 °C to +175 °C
    • ECOPACK2 compliant component

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC10G065

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Quality and Reliability

Part Number Marketing Status Package Grade 符合RoHS级别 Longevity Commitment Longevity Starting Date Material Declaration**
STPSC10G065D
Active
TO-220AC Industrial Ecopack2 7 2025-03-21T00:00:00.000+01:00

STPSC10G065D

Package:

TO-220AC

Material Declaration**:

PDF XML

Marketing Status

Active

Package

TO-220AC

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

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STPSC10G065D

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STPSC10G065D

Junction Temperature (°C) (max):

175

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商