产品概述
描述
SGT3D5R10MEB是一款100 V、201 A增强模式PowerGaN晶体管。该器件具有极低的导通损耗、大电流承载能力并支持超快的开关操作，助力实现高功率密度和卓越能效。
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All features
- 增强模式常关晶体管
- 超快的开关速度
- 大功率管理能力
- 极低电容
- 零反向恢复电荷
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SGT3D5R10MEB
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| SGT3D5R10MEB | Preview 产品尚在设计阶段 | EN-FCLGA 3.3X3.3 | Industrial | N/A | - | - | |
SGT3D5R10MEB
Package:
EN-FCLGA 3.3X3.3Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SGT3D5R10MEB | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
SGT3D5R10MEB Preview
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