The 600/650V superjunction power MOSFET technology is the world's only technology suitable for both hard (PFC) and soft switching (LLC), the 600/650V MDmesh M9 series allows more compact solutions and increased power density. The fast intrinsic diode MDmesh DM9 series provides higher dv/dt and di/dt, resulting in increased ruggedness and reliability. With the best figure of merit on the market and up to 46% lower RDS(on) compared to the previous generation these superjunction power MOSFETs help designers to achieve higher system efficiency, increase power density, and optimize thermal dissipation.
The new MDmesh M9 and MDmesh DM9 flyers provide a complete overview of the key features and related benefits of these STPOWER superjunction series.
The test and analysis section shows a comparative benchmark with the previous technology generation and the best competitors, highlighting the excellent performance of these new series in terms of power efficiency.
Key features and benefits
- Best figure of merit (RDS(on) x Qg) on the market
Specific to MDmesh M9 series
- Industry’s best RDS(on) for 650 V voltage range
- Lowest Qg
- Higher reverse diode dv/dt and MOSFET dv/dt ruggedness
- Higher power levels
- Increased power density and lower conduction losses
- High efficiency and low switching power losses
- High switching speed
- Increased robustness and reliability for more compact design
Specific to MDmesh DM9 series
- Improved intrinsic diode reverse recovery time (trr)
- Higher dv/dt (120 V/ns) and di/dt capability (1300 A/µs)
- Optimized body diode recovery phase and softness
- Increased power levels
- Extremely high efficiency performance and increased power density
- Improved system reliability and robustness
- Higher operating frequencies and better thermal management
Key applications
Specific to MDmesh M9 series
- Telecom servers and data centers
- 5G power stations
- Flat TV panels and PC SMPS
- Fast chargers
- Solar microinverters
