产品概要
描述
该器件是采用先进的专有沟槽栅场截止结构开发的IGBT。该器件是H系列IGBT中的一员，能够有效平衡导通损耗与开关损耗，从而显著提升了高开关频率转换器的效率。此外，它的VCE(sat)正温度系数和超紧密的参数分布使得并联操作更为安全。
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性能一览
- 最大结温：TJ = 175 °C
- 低 VCE(sat) = 1.6 V（典型值）@ IC = 4 A
- 紧凑参数分布
- 低热阻
- 具有短路额定值
- 软恢复反并联二极管
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGD4H60DF
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 20 Jan 2022 | 20 Jan 2022 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| STGD4H60DF | Active 产品已量产 | Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package | DPAK | Industrial | Ecopack2 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STGD4H60DF | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
| |||||||||||
STGD4H60DF Active
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