产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
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所有功能
- 10 µs of short-circuit withstand time
- Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Maximum junction temperature: TJ = 175 °C
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EDA符号、封装和3D模型
STMicroelectronics - STG25M120F3D7
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
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| 最小值 | 最大值 | |||||||||||||
| STG25M120F3D7 | | | distributors 无法联系到经销商，请联系我们的销售办事处 | |||||||||||
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