产品概要
描述
最新的IGBT 650 HB2系列代表了先进的专有沟槽栅极场截止结构的发展。得益于低电流值下更优的VCE(sat) 表现以及开关能量的降低，HB2系列的性能在导通方面得到了优化。
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性能一览
- 符合AEC-Q101标准
- 最高结温：TJ = 175 °C
- 高速开关系列
- 最小尾电流
- 低VCE(sat) = 1.6 V（典型值）@ IC = 50 A
- 参数分布紧密
- 低热阻
- 正VCE(sat) 温度系数
- 与高耐用性整流二极管共同封装
- 通过额外的驱动kelvin引脚实现出色的开关性能
EDA Symbols, Footprints and 3D Models
STMicroelectronics - GH50H65DRB2-7AG
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| GH50H65DRB2-7AG | Active 产品已量产 | Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT featuring freewheeling diode in an H2PAK-7 package | H2PAK-7 | Automotive | Ecopack1 | 10 | 2024-08-12T00:00:00.000+02:00 | |
GH50H65DRB2-7AG
Package:
Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT featuring freewheeling diode in an H2PAK-7 packageMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | General Description | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GH50H65DRB2-7AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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GH50H65DRB2-7AG Active
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