产品概述
描述
The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.
The STAC4932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC.
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所有功能
- Excellent thermal stability
- Common source push-pull configuration
- POUT = 1000 W min. (1200 W typ.) with 26 dB gain at 123 MHz
- Pulse conditions: 1ms, 10%
- In compliance with the 2002/95/EC European directive
- ST air-cavity STAC packaging technology
EDA符号、封装和3D模型
意法半导体 - STAC4932F
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
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ADS models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
