会议文章
- 3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices
- Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis
- Cost benefits of a SiC MOSFET-based high frequency converter
- Design rules for paralleling of Silicon Carbide Power MOSFETs
- SiC and Silicon MOSFET solution for high frequency DC-AC converters
