STW70N60M2-4

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Design Win

N沟道600 V、0.031 Ohm典型值、68 A MDmesh M2功率MOSFET,TO247-4封装

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产品概述

描述

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

  • 所有功能

    • Excellent switching performance thanks to the extra driving source pin
    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected

EDA符号、封装和3D模型

STMicroelectronics - STW70N60M2-4

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