STU6N60M2

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N沟道600 V、1.06 Ohm典型值、4.5 A MDmesh M2功率MOSFET,IPAK封装

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产品概述

描述

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

EDA符号、封装和3D模型

STMicroelectronics - STU6N60M2

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