STU5N80K5

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Design Win

N沟道800 V、1.50 Ohm典型值、4 A MDmesh K5功率MOSFET,IPAK封装

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产品概述

描述

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

  • 所有功能

    • Industry’s lowest RDS(on) x area
    • Industry’s best FoM (figure of merit)
    • Ultra-low gate charge
    • 100% avalanche tested
    • Zener-protected

EDA符号、封装和3D模型

STMicroelectronics - STU5N80K5

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