会议文章
- 3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices
- Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis
- Cost benefits of a SiC MOSFET-based high frequency converter
- Design rules for paralleling of Silicon Carbide Power MOSFETs
- SiC and Silicon MOSFET solution for high frequency DC-AC converters
技术说明
应用手册
规格书
- Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247 long leads package
- Automotive silicon carbide Power MOSFET 650 V, 200 A, 10 mΩ (typ., TJ= 150 °C) in a Max247-T long lead
- Automotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mΩ typ., 28 A SiC Power MOSFET
- Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
- Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package
