STP110N8F6

已停产
Design Win

N沟道80 V、0.0056 Ohm典型值、110 A STripFET F6功率MOSFET,TO-220封装

下载数据手册

产品概述

描述

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.

EDA符号、封装和3D模型

STMicroelectronics - STP110N8F6

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

符号

Footprints

封装

3D model

3D模型