STH47N60DM6-2AG

已停产
Design Win

汽车级N沟道600 V、70 mOhm典型值、36 A MDmesh DM6功率MOSFET,H2PAK-2封装

下载数据手册

产品概述

描述

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

  • 所有功能

    • AEC-Q101 qualified
    • Fast-recovery body diode
    • Lower RDS(on) per area vs previous generation
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected

EDA符号、封装和3D模型

STMicroelectronics - STH47N60DM6-2AG

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

符号

Footprints

封装

3D model

3D模型