STH240N75F3-2

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N沟道75 V、2.6 mOhm典型值、180 A STripFET(TM) III功率MOSFET,H2PAK-2封装

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产品概述

描述

These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.

EDA符号、封装和3D模型

STMicroelectronics - STH240N75F3-2

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