产品概述
描述
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
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所有功能
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Logic level drive
- High avalanche ruggedness
- 100% avalanche tested
特别推荐
EDA符号、封装和3D模型
意法半导体 - STH160N4LF6-2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
