产品概述
描述
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
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所有功能
- Lower on voltage drop (VCE(sat))
- Very soft ultra fast recovery antiparallel diode
- Lower CRES / CIES ratio (no cross-conduction susceptibility)
- Short circuit withstand time 10µs
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STGF8NC60KD
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