STG15M120F3D8

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Design Win

1200 V、15 A沟槽栅场截止M系列低损耗IGBT晶片,D8封装

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产品概述

描述

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

  • 所有功能

    • 10 μs of short-circuit withstand time
    • Low VCE(sat) = 1.85 V (typ.) at IC = 15 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Minimized junction temperature: TJ = 175 °C

EDA符号、封装和3D模型

STMicroelectronics - STG15M120F3D8

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