STFH10N60M6

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Design Win

N沟道600 V、520 mOhm典型值、6.4 A MDmesh M6功率MOSFET,TO-220FP宽沿面封装

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产品概述

描述

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.

  • 所有功能

    • Reduced switching losses
    • Lower RDS(on) per area vs previous generation
    • Low gate input resistance
    • 100% avalanche tested
    • Zener-protected

EDA符号、封装和3D模型

STMicroelectronics - STFH10N60M6

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