STF6N65M2

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N沟道650 V、1.2 Ohm典型值、4 A MDmesh M2功率MOSFET,TO-220FP封装

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产品概述

描述

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

EDA符号、封装和3D模型

STMicroelectronics - STF6N65M2

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